View BF1207_4831430.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1. product pro?le 1.1 general description the BF1207 is a combination of two dual gate mosfet ampli?ers with shared source and gate2 leads and an integrated switch. the source and substrate are interconnected. internal bias circuits enable direct current (dc) stabilization and a very good cross-modulation performance during automatic gain control (agc). integrated diodes between the gates and source protect against excessive input voltage surges. the BF1207 has a sot363 micro-miniature plastic package. 1.2 features n two low noise gain controlled ampli?ers in a single package. one with a fully integrated bias and one with partly integrated bias n internal switch to save external components n superior cross-modulation performance during agc n high forward transfer admittance n high forward transfer admittance to input capacitance ratio 1.3 applications n gain controlled low noise ampli?ers for very high frequency (vhf) and ultra high frequency (uhf) applications with 5 v supply voltage, such as digital and analog television tuners and professional communication equipment BF1207 dual n-channel dual gate mosfet rev. 01 28 july 2005 product data sheet caution this device is sensitive to electrostatic discharge (esd). therefore care should be taken during transport and handling. msc895
9397 750 14955 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 28 july 2005 2 of 22 philips semiconductors BF1207 dual n-channel dual gate mosfet 1.4 quick reference data [1] t sp is the temperature at the soldering point of the source lead. 2. pinning information table 1: quick reference data per mosfet unless otherwise speci?ed. symbol parameter conditions min typ max unit v ds drain-source voltage dc - - 6 v i d drain current dc - - 30 ma p tot total power dissipation t sp 107 c [1] - - 180 mw ? y fs ? forward transfer admittance f = 1 mhz ampli?er a; i d =18ma 25 30 40 ms ampli?er b; i d =14ma 26 31 41 ms c iss(g1) input capacitance at gate1 f = 100 mhz ampli?er a - 2.2 2.7 pf ampli?er b - 1.9 2.4 pf c rss reverse transfer capacitance f = 100 mhz - 20 - ff nf noise ?gure ampli?er a; f = 400 mhz - 1.3 - db ampli?er b; f = 800 mhz - 1.4 - db xmod cross-modulation input level for k = 1 % at 40 db agc ampli?er a 100 105 - db m v ampli?er b 100 103 - db m v t j junction temperature - - 150 c table 2: discrete pinning pin description simpli?ed outline symbol 1 drain (amp a) 2 source 3 drain (amp b) 4 gate1 (amp b) 5 gate2 6 gate1 (amp a) 13 2 4 5 6 sym108 g1a g1b g2 s db da amp a amp b
9397 750 14955 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 28 july 2005 3 of 22 philips semiconductors BF1207 dual n-channel dual gate mosfet 3. ordering information 4. marking [1] * = p: made in hong kong. * = t: made in malaysia. * = w: made in china. 5. limiting values [1] t sp is the temperature at the soldering point of the source lead. table 3: ordering information type number package name description version BF1207 - plastic surface mounted package; 6 leads sot363 table 4: marking type number marking code [1] BF1207 m2* table 5: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per mosfet v ds drain-source voltage dc - 6 v i d drain current dc - 30 ma i g1 gate1 current - 10 ma i g2 gate2 current - 10 ma p tot total power dissipation t sp 107 c [1] - 180 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c
9397 750 14955 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 28 july 2005 4 of 22 philips semiconductors BF1207 dual n-channel dual gate mosfet 6. thermal characteristics 7. static characteristics fig 1. power derating curve t sp ( c) 0 200 150 50 100 001aac741 100 150 50 200 250 p tot (mw) 0 table 6: thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to soldering point 240 k/w table 7: static characteristics t j =25 c. symbol parameter conditions min typ max unit per mosfet; unless otherwise speci?ed v (br)dss drain-source breakdown voltage v g1-s =v g2-s =0v; i d =10 m a ampli?er a 6 - - v ampli?er b 6 - - v v (br)g1-ss gate1-source breakdown voltage v gs =v ds =0v; i g1-s =10ma 6 - 10 v v (br)g2-ss gate2-source breakdown voltage v gs =v ds =0v; i g2-s =10ma 6 - 10 v v f(s-g1) forward source-gate1 voltage v g2-s =v ds =0v; i s-g1 = 10 ma 0.5 - 1.5 v v f(s-g2) forward source-gate2 voltage v g1-s =v ds =0v; i s-g2 = 10 ma 0.5 - 1.5 v v g1-s(th) gate1-source threshold voltage v ds =5v; v g2-s =4v; i d = 100 m a 0.3 - 1.0 v v g2-s(th) gate2-source threshold voltage v ds =5v; v g1-s =5v; i d = 100 m a 0.4 - 1.0 v i dsx drain-source current v g2-s =4v; v ds =5v; r g1 =68k w ampli?er a [1] 13 - 23 ma ampli?er b [2] 9 - 19 ma
9397 750 14955 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 28 july 2005 5 of 22 philips semiconductors BF1207 dual n-channel dual gate mosfet [1] r g1 connects gate1 (a) to v gg = 5 v (see figure 3 ). [2] r g1 connects gate1 (b) to v gg = 0 v (see figure 3 ). i g1-s gate1 cut-off current v g2-s =v ds(a) =0v ampli?er a; v g1-s(a) =5v; v ds(b) = 0 v - - 50 na ampli?er b; v g1-s(a) =0v; i d(b) =0a - - 50 na i g2-s gate2 cut-off current v g2-s =4v; v g1-s =v ds(a) =v ds(b) = 0 v; - - 20 na table 7: static characteristics continued t j =25 c. symbol parameter conditions min typ max unit (1) i d(a) ; r g1 =47k w . (2) i d(a) ; r g1 =68k w . (3) i d(a) ; r g1 = 100 k w . (4) i d(b) ; r g1 = 100 k w . (5) i d(b) ; r g1 =68k w . (6) i d(b) ; r g1 =47k w . v ds(a) =v ds(b) =5v; v g2-s =4v; t j =25 c. v gg = 5 v: ampli?er a is on; ampli?er b is off. v gg = 0 v: ampli?er a is off; ampli?er b is on. fig 2. drain currents of mosfet a and b as function of v gg fig 3. functional diagram 001aac742 8 12 4 16 20 i d (ma) 0 v gg (v) 05 4 23 1 (2) (5) (4) (6) (3) (1) 001aac881 r g1 v gg g1a g2 g1b da s db
9397 750 14955 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 28 july 2005 6 of 22 philips semiconductors BF1207 dual n-channel dual gate mosfet 8. dynamic characteristics 8.1 dynamic characteristics for ampli?er a [1] for the mosfet not in use: v g1-s(b) = 0 v; v ds(b) =0v. [2] measured in figure 29 test circuit. table 8: dynamic characteristics for ampli?er a common source; t amb =25 c; v g2-s =4v; v ds =5v; i d = 18 ma. [1] symbol parameter conditions min typ max unit ? y fs ? forward transfer admittance t j =25 c253040ms c iss(g1) input capacitance at gate1 f = 100 mhz - 2.2 2.7 pf c iss(g2) input capacitance at gate2 f = 1 mhz - 3.5 - pf c oss output capacitance f = 100 mhz - 0.9 - pf c rss reverse transfer capacitance f = 100 mhz - 20 - ff g tr power gain b s =b s(opt) ; b l =b l(opt) f = 200 mhz; g s = 2 ms; g l = 0.5 ms 30 34 38 db f = 400 mhz; g s = 2 ms; g l =1ms 26 30 34 db f = 800 mhz; g s = 3.3 ms; g l = 1 ms 21 25 29 db nf noise ?gure f = 11 mhz; g s = 20 ms; b s = 0 s - 3.0 - db f = 400 mhz; y s =y s(opt) - 1.3 - db f = 800 mhz; y s =y s(opt) - 1.4 - db xmod cross-modulation input level for k = 1 %; f w = 50 mhz; f unw =60mhz [2] at 0 db agc 90 - - db m v at 10 db agc - 90 - db m v at 20 db agc - 99 - db m v at 40 db agc 100 105 - db m v
9397 750 14955 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 28 july 2005 7 of 22 philips semiconductors BF1207 dual n-channel dual gate mosfet 8.1.1 graphs for ampli?er a (1) v g2-s =4v. (2) v g2-s = 3.5 v. (3) v g2-s =3v. (4) v g2-s = 2.5 v. (5) v g2-s =2v. (6) v g2-s = 1.5 v. (7) v g2-s =1v. v ds(a) =5v; t j =25 c. (1) v g1-s(a) = 1.9 v. (2) v g1-s(a) = 1.8 v. (3) v g1-s(a) = 1.7 v. (4) v g1-s(a) = 1.6 v. (5) v g1-s(a) = 1.5 v. (6) v g1-s(a) = 1.4 v. (7) v g1-s(a) = 1.3 v. (8) v g1-s(a) = 1.2 v. (9) v g1-s(a) = 1.1 v. v ds(a) =5v; v g2-s =4v; t j =25 c. fig 4. ampli?er a: transfer characteristics; typical values fig 5. ampli?er a: output characteristics; typical values v g1-s (v) 0 2.0 1.6 0.8 1.2 0.4 001aac882 i d (ma) 15 5 10 20 30 25 35 0 (7) (6) (5) (4) (1) (2) (3) 001aaa883 v ds (v) 06 4 2 16 8 24 32 i d (ma) 0 (2) (3) (6) (9) (8) (5) (1) (4) (7)
9397 750 14955 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 28 july 2005 8 of 22 philips semiconductors BF1207 dual n-channel dual gate mosfet (1) v g2-s =4v. (2) v g2-s = 3.5 v. (3) v g2-s =3v. (4) v g2-s = 2.5 v. (5) v g2-s =2v. (6) v g2-s = 1.5 v. (7) v g2-s =1v. v ds(a) =5v; t j =25 c. (1) r g1(a) =39k w . (2) r g1(a) =47k w . (3) r g1(a) =68k w . (4) r g1(a) =82k w . (5) r g1(a) = 100 k w . (6) r g1(a) = 120 k w . (7) r g1(a) = 150 k w . v g2-s =4v; t j =25 c. fig 6. ampli?er a: forward transfer admittance as a function of drain current; typical values fig 7. ampli?er a: drain current as a function of v ds and v gg ; typical values v g2-s =4v, t j =25 c, r g1(b) =68k w (connected to ground); see figure 3 . fig 8. ampli?er a: drain current of ampli?er a as a function of supply voltage of a and b ampli?er; typical values i d (ma) 032 24 816 001aac884 20 10 30 40 y fs (ms) 0 (1) (2) (6) (7) (5) (4) (3) 001aac885 v gg = v ds (v) 06 4 2 i d (ma) (1) (2) (3) (4) (5) (7) 5 10 15 20 25 0 (6) v supply (v) 05 4 23 1 001aac886 8 12 4 16 20 i d (ma) 0
9397 750 14955 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 28 july 2005 9 of 22 philips semiconductors BF1207 dual n-channel dual gate mosfet v ds(a) =v ds(b) =5v; v g1-s(b) =0v; f w = 50 mhz; f unw = 60 mhz; t amb =25 c; see figure 29 . v ds(a) =v ds(b) =5v; v g1-s(b) = 0 v; f = 50 mhz; see figure 29 . fig 9. ampli?er a: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values fig 10. ampli?er a: gain reduction as a function of agc voltage; typical values v ds(a) =v ds(b) =5v; v g1-s(b) = 0 v; f = 50 mhz; t amb =25 c; see figure 29 . fig 11. ampli?er a: drain current as a function of gain reduction; typical values gain reduction (db) 050 40 20 30 10 001aac887 100 90 110 120 v unw (db m v) 80 v agc (v) 04 3 12 001aac888 30 20 40 10 0 gain reduction (db) 50 gain reduction (db) 050 40 20 30 10 001aac889 i d (ma) 8 24 16 32 0
9397 750 14955 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 28 july 2005 10 of 22 philips semiconductors BF1207 dual n-channel dual gate mosfet v ds(a) =5v; v g2-s =4v; v ds(b) =v g1-s(b) =0v; i d(a) = 18 ma. v ds(a) =5v; v g2-s =4v; v ds(b) =v g1-s(b) =0v; i d(a) = 18 ma. fig 12. ampli?er a: input admittance as a function of frequency; typical values fig 13. ampli?er a: forward transfer admittance and phase as a function of frequency; typical values v ds(a) =5v; v g2-s =4v; v ds(b) =v g1-s(b) =0v; i d(a) = 18 ma. v ds(a) =5v; v g2-s =4v; v ds(b) =v g1-s(b) =0v; i d(a) = 18 ma. fig 14. ampli?er a: reverse transfer admittance and phase as a function of frequency: typical values fig 15. ampli?er a: output admittance as a function of frequency; typical values 001aac890 f (mhz) 10 10 3 10 2 10 - 1 1 10 10 2 b is , g is (ms) 10 - 2 b is g is f (mhz) 10 10 3 10 2 001aac891 10 10 2 |y fs | (ms) 1 - 10 - 10 2 j fs (deg) - 1 |y fs | j fs 001aac892 10 2 10 10 3 |y rs | ( m s) 1 f (mhz) 10 10 3 10 2 - 10 2 - 10 - 10 3 j rs (deg) - 1 |y rs | j rs 001aac893 1 10 - 1 10 b os , g os (ms) 10 - 2 f (mhz) 10 10 3 10 2 b os g os
9397 750 14955 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 28 july 2005 11 of 22 philips semiconductors BF1207 dual n-channel dual gate mosfet 8.1.2 scattering parameters for ampli?er a table 9: scattering parameters for ampli?er a v ds(a) =5v; v g2-s =4v; i d(a) = 18 ma; v ds(b) =0v;v g1-s(b) =0v; t amb = 25 c; typical values. f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 50 0.987 - 4.169 2.87 175.5 0.0008 83.82 0.992 - 1.42 100 0.983 - 8.109 2.95 171.14 0.0015 82.08 0.992 - 2.86 200 0.976 - 15.97 2.93 162.44 0.0028 77.50 0.990 - 5.66 300 0.966 - 23.844 2.89 153.77 0.0041 73.45 0.989 - 8.49 400 0.952 - 31.575 2.84 145.23 0.0053 69.42 0.986 - 11.28 500 0.935 - 35.225 2.78 136.82 0.0063 65.72 0.984 - 14.03 600 0.917 - 46.678 2.72 128.50 0.0072 61.48 0.981 - 16.80 700 0.898 - 54.094 2.65 120.44 0.0079 58.05 0.977 - 19.55 800 0.876 - 61.205 2.57 112.33 0.0084 52.74 0.974 - 22.32 900 0.852 - 68.299 2.49 104.32 0.0089 48.61 0.970 - 25.10 1000 0.826 - 75.321 2.41 96.42 0.0091 43.86 0.967 - 27.88
9397 750 14955 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 28 july 2005 12 of 22 philips semiconductors BF1207 dual n-channel dual gate mosfet 8.2 dynamic characteristics for ampli?er b [1] for the mosfet not in use: v g1-s(a) = 0 v; v ds(a) =0 v. [2] measured in figure 30 test circuit. table 10: dynamic characteristics for ampli?er b common source; t amb =25 c; v g2-s =4v; v ds =5v; i d = 14 ma. [1] symbol parameter conditions min typ max unit ? y fs ? forward transfer admittance t j =25 c263141ms c iss(g1) input capacitance at gate1 f = 100 mhz - 1.8 2.3 pf c iss(g2) input capacitance at gate2 f = 1 mhz - 3.5 - pf c oss output capacitance f = 100 mhz - 0.8 - pf c rss reverse transfer capacitance f = 100 mhz - 20 - ff g tr power gain b s =b s(opt) ; b l =b l(opt) f = 200 mhz; g s = 2 ms; g l = 0.5 ms 30 34 38 db f = 400 mhz; g s = 2 ms; g l =1ms 27 31 35 db f = 800 mhz; g s = 3.3 ms; g l = 1 ms 23 27 31 db nf noise ?gure f = 11 mhz; g s = 20 ms; b s =0s - 5 - db f = 400 mhz; y s =y s(opt) - 1.3 - db f = 800 mhz; y s =y s(opt) - 1.4 - db xmod cross-modulation input level for k=1%;f w = 50 mhz; f unw =60mhz [2] at 0 db agc 90 - - db m v at 10 db agc - 88 - db m v at 20 db agc - 94 - db m v at 40 db agc 100 103 - db m v
9397 750 14955 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 28 july 2005 13 of 22 philips semiconductors BF1207 dual n-channel dual gate mosfet 8.2.1 graphs for ampli?er b (1) v g2-s =4v. (2) v g2-s = 3.5 v. (3) v g2-s =3v. (4) v g2-s = 2.5 v. (5) v g2-s =2v. (6) v g2-s = 1.5 v. (7) v g2-s =1v. v ds(b) =5v; v g1-s(a) =0v; t j =25 c. (1) v g1-s(b) = 1.7 v. (2) v g1-s(b) = 1.6 v. (3) v g1-s(b) = 1.5 v. (4) v g1-s(b) = 1.4 v. (5) v g1-s(b) = 1.3 v. (6) v g1-s(b) = 1.2 v. (7) v g1-s(b) = 1.1 v. v g2-s =4v; v g1-s(a) =0v; t j =25 c. fig 16. ampli?er b: transfer characteristics; typical values fig 17. ampli?er b: output characteristics; typical values v g1-s (v) 02 1.6 0.8 1.2 0.4 001aac894 10 20 30 i d (ma) 0 (4) (5) (2) (3) (1) (7) (6) 001aac895 v ds (v) 06 4 2 16 8 24 32 i d (ma) 0 (2) (6) (7) (4) (3) (5) (1)
9397 750 14955 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 28 july 2005 14 of 22 philips semiconductors BF1207 dual n-channel dual gate mosfet (1) v g2-s =4v. (2) v g2-s = 3.5 v. (3) v g2-s =3v. (4) v g2-s = 2.5 v. (5) v g2-s =2v. (6) v g2-s = 1.5 v. (7) v g2-s =1v. v ds(b) =5v; v g1-s(a) =0v; t j =25 c. (1) v ds =5v. (2) v ds = 4.5 v. (3) v ds =4v. (4) v ds = 3.5 v. (5) v ds =3v. v g1-s(a) =0v; t j =25 c. fig 18. ampli?er b: forward transfer admittance as a function of drain current; typical values fig 19. ampli?er b: drain current as function of gate2 voltage; typical values v ds(b) =5v; v g1-s(a) =0v; t j =25 c. v ds(b) =5v; v g2-s =4v; v g1-s(a) =0v; t j =25 c. fig 20. ampli?er b: drain current as a function of drain source voltage; typical values fig 21. ampli?er b: drain current as a function of gate1 current; typical values i d (ma) 032 24 816 001aac896 20 10 30 40 y fs (ms) 0 (1) (6) (5) (4) (3) (2) (7) v g2-s (v) 05 4 23 1 001aac897 8 12 4 16 20 i d (ma) 0 (1) (2) (3) (4) (5) 001aac898 v ds (v) 06 4 2 8 12 4 16 20 i d(a) (ma) 0 i g1 ( m a) - 40 0 - 20 - 10 - 30 001aac899 8 4 12 16 i d (ma) 0
9397 750 14955 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 28 july 2005 15 of 22 philips semiconductors BF1207 dual n-channel dual gate mosfet v ds(b) =5v; v gg =5v; v ds(a) =v g1-s(a) =0v; r g1(b) = 150 k w (connected to v gg ); f w = 50 mhz; f unw = 60 mhz; t amb =25 c; see figure 30 . v ds(b) =5v; v gg =5v; v ds(a) =v g1-s(a) =0v; r g1(b) = 150 k w (connected to v gg ); f = 50 mhz; t amb =25 c; see figure 30 . fig 22. ampli?er b: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values fig 23. ampli?er b: typical gain reduction as a function of agc voltage; typical values v ds(b) =5v; v gg =5v; v ds(a) =v g1-s(a) =0v; r g1(b) = 150 k w (connected to v gg ); f = 50 mhz; t amb =25 c; see figure 30 . fig 24. ampli?er b: drain current as a function of gain reduction; typical values 001aac900 gain reduction (db) 060 40 20 100 90 110 120 v unw (db m v) 80 v agc (v) 04 3 12 001aac901 30 20 40 10 0 gain reduction (db) 50 001aac902 gain reduction (db) 060 40 20 8 12 4 16 20 i d (ma) 0
9397 750 14955 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 28 july 2005 16 of 22 philips semiconductors BF1207 dual n-channel dual gate mosfet v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; i d(b) = 14 ma. v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; i d(b) = 14 ma. fig 25. ampli?er b: input admittance as a function of frequency; typical values fig 26. ampli?er b: forward transfer admittance and phase as a function of frequency; typical values v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; i d(b) = 14 ma. v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; i d(b) = 14 ma. fig 27. ampli?er b: reverse transfer admittance and phase as a function of frequency; typical values fig 28. ampli?er b: output admittance as a function of frequency; typical values 001aac903 f (mhz) 10 10 3 10 2 10 - 1 1 10 10 2 b is , g is (ms) 10 - 2 b is g is f (mhz) 10 10 3 10 2 001aac904 10 10 2 |y fs | (ms) 1 - 10 - 10 2 j fs (deg) - 1 |y fs | j fs 001aac905 10 2 10 10 3 |y rs | ( m s) 1 - 10 2 - 10 - 10 3 j rs (deg) - 1 f (mhz) 10 10 3 10 2 |y rs | j rs 001aac906 1 10 - 1 10 b os , g os (ms) 10 - 2 f (mhz) 10 10 3 10 2 b os g os
9397 750 14955 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 28 july 2005 17 of 22 philips semiconductors BF1207 dual n-channel dual gate mosfet 8.2.2 scattering parameters for ampli?er b table 11: scattering parameters for ampli?er b v ds(b) =5v; v g2-s =4v; i d(b) = 14 ma; v ds(a) =0v;v g1-s(a) =0v; t amb = 25 c; typical values. f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 50 0.993 - 3.018 3.07 176.04 0.0004 95.97 0.991 - 1.39 100 0.992 - 6.186 3.07 172.05 0.0011 90.33 0.990 - 2.79 200 0.987 - 12.43 3.09 164.13 0.0024 85.03 0.988 - 5.49 300 0.979 - 18.60 3.02 156.28 0.0036 82.94 0.986 - 8.21 400 0.969 - 24.62 2.99 148.48 0.0046 81.97 0.983 - 10.91 500 0.957 - 30.72 2.95 140.69 0.0056 81.03 0.980 - 13.63 600 0.943 - 36.71 2.90 132.87 0.0065 79.77 0.977 - 16.40 700 0.927 - 42.77 2.86 125.21 0.0074 79.04 0.973 - 19.13 800 0.907 - 48.91 2.79 117.22 0.0082 79.42 0.969 - 21.93 900 0.885 - 54.77 2.736 109.29 0.0086 75.47 0.964 - 24.85 1000 0.858 - 61.01 2.675 101.18 0.0092 73.48 0.958 - 27.75
9397 750 14955 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 28 july 2005 18 of 22 philips semiconductors BF1207 dual n-channel dual gate mosfet 9. test information fig 29. cross-modulation test set-up for ampli?er a 50 w 10 k w r gen 50 w 50 w r g1 4.7 nf 4.7 nf 4.7 nf g2 s g1a da db 4.7 nf 4.7 nf 4.7 nf g1b BF1207 v gg 5 v v ds(a) 5 v v ds(b) 5v v agc l2 2.2 m h l1 2.2 m h r l 50 w 001aac907 v i fig 30. cross-modulation test set-up for ampli?er b 50 w 10 k w r gen 50 w r l 50 w 50 w r g1 4.7 nf 4.7 nf 4.7 nf g2 s g1a da db 4.7 nf 4.7 nf 4.7 nf g1b BF1207 v gg 0 v v ds(a) 5 v v ds(b) 5v v agc l2 2.2 m h l1 2.2 m h 001aac908 v i
9397 750 14955 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 28 july 2005 19 of 22 philips semiconductors BF1207 dual n-channel dual gate mosfet 10. package outline fig 31. package outline sot363 references outline version european projection issue date iec jedec jeita sot363 sc-88 wb m b p d e 1 e pin 1 index a a 1 l p q detail x h e e v m a a b y 0 1 2 mm scale c x 13 2 4 5 6 plastic surface mounted package; 6 leads sot363 unit a 1 max b p cd e e 1 h e l p qy w v mm 0.1 0.30 0.20 2.2 1.8 0.25 0.10 1.35 1.15 0.65 e 1.3 2.2 2.0 0.2 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 0.25 0.15 a 1.1 0.8 97-02-28 04-11-08
9397 750 14955 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 28 july 2005 20 of 22 philips semiconductors BF1207 dual n-channel dual gate mosfet 11. revision history table 12: revision history document id release date data sheet status change notice doc. number supersedes BF1207_1 20050728 product data sheet - 9397 750 14955 -
philips semiconductors BF1207 dual n-channel dual gate mosfet 9397 750 14955 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 28 july 2005 21 of 22 12. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 14. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 15. trademarks notice all referenced brands, product names, service names and trademarks are the property of their respective owners. 16. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2005 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 28 july 2005 document number: 9397 750 14955 published in the netherlands philips semiconductors BF1207 dual n-channel dual gate mosfet 17. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 static characteristics. . . . . . . . . . . . . . . . . . . . . 4 8 dynamic characteristics . . . . . . . . . . . . . . . . . . 6 8.1 dynamic characteristics for ampli?er a. . . . . . . 6 8.1.1 graphs for ampli?er a . . . . . . . . . . . . . . . . . . . . 7 8.1.2 scattering parameters for ampli?er a . . . . . . . 11 8.2 dynamic characteristics for ampli?er b. . . . . . 12 8.2.1 graphs for ampli?er b . . . . . . . . . . . . . . . . . . . 13 8.2.2 scattering parameters for ampli?er b . . . . . . . 17 9 test information . . . . . . . . . . . . . . . . . . . . . . . . 18 10 package outline . . . . . . . . . . . . . . . . . . . . . . . . 19 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 20 12 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 21 13 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 14 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 15 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 16 contact information . . . . . . . . . . . . . . . . . . . . 21

▲Up To Search▲

Price & Availability of BF1207

	To Download BF1207 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .